Method of fabricating sectional field effect devices

Details Method of fabricating sectional field effect devices Method of fabricating sectional field effect devices

2006-05-13

2008-08-19

Landau, Matthew C (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S157000

Reexamination Certificate

active

07413941

ABSTRACT:
A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors.

REFERENCES:
patent: 4907053 (1990-03-01), Ohmi
patent: 5136350 (1992-08-01), Itoh
patent: 5225701 (1993-07-01), Shimizu
patent: 6228691 (2001-05-01), Doyle
patent: 6483156 (2002-11-01), Adkisson
patent: 6541810 (2003-04-01), Divakaruni et al.
patent: 6562665 (2003-05-01), Yu
patent: 6716686 (2004-04-01), Buynoski
patent: 6750487 (2004-06-01), Fried
patent: 6800910 (2004-10-01), Lin
patent: 2005/0001273 (2005-01-01), Bryant et al.
patent: 2005/0023619 (2005-02-01), Orlowski
patent: 2006/0084243 (2006-04-01), Zhang et al.
patent: PUPA4-268767 (1992-09-01), None
patent: PUPA7-183528 (1995-07-01), None

Affiliated with

Also associated with

Rating

Method of fabricating sectional field effect devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating sectional field effect devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating sectional field effect devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4015337