Method of fabricating seamless tungsten plug employing tungsten

Details Method of fabricating seamless tungsten plug employing tungsten Method of fabricating seamless tungsten plug employing tungsten

1997-06-03

1998-05-05

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438627, 438629, 438648, 438672, H01L 21283

Patent

active

057473790

ABSTRACT:
A process has been developed in which seamless tungsten plugs are used to fill deep, narrow contact holes. The process features initially forming a tungsten plug in a contact hole, via tungsten LPCVD processing, followed by an RIE etch back, and recessing process. A second tungsten LPCVD procedure is then used to fill seams or defects in the underlying tungsten plug. Another RIE etch back procedure is then employed to create a seamless, composite tungsten plug structure, in the deep, narrow contact hole.

REFERENCES:
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5374849 (1994-12-01), Tada
patent: 5387550 (1995-02-01), Cheffingo et al.
patent: 5422310 (1995-06-01), Ito
patent: 5470789 (1995-11-01), Misawa
patent: 5470792 (1995-11-01), Yamada
patent: 5496773 (1996-03-01), Rhodes et al.
patent: 5523624 (1996-06-01), Chen et al.
patent: 5622894 (1997-04-01), Jang et al.
patent: 5656545 (1997-08-01), Yu
Wolf, S., Silicon Processing, vol. 2, 1990, Lattice Press, pp. 103-109, 1990.

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