Method of fabricating Schottky barrier transistor

Details Method of fabricating Schottky barrier transistor Method of fabricating Schottky barrier transistor

2011-03-08

2011-03-08

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S570000, C257SE21425, C257SE21432

Reexamination Certificate

active

07902011

ABSTRACT:
Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate;(b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.

REFERENCES:
patent: 6835611 (2004-12-01), Tsui et al.
patent: 7646046 (2010-01-01), Russ et al.
patent: 2003/0096491 (2003-05-01), Hizawa
patent: 2004/0099966 (2004-05-01), Chau et al.
patent: 2005/0136617 (2005-06-01), Jang
patent: 2005/0139860 (2005-06-01), Snyder et al.
patent: 2008/0081404 (2008-04-01), Barna et al.

Affiliated with

Also associated with

Rating

Method of fabricating Schottky barrier transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating Schottky barrier transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating Schottky barrier transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2649175