Method of fabricating salicide-structure semiconductor device

Details Method of fabricating salicide-structure semiconductor device Method of fabricating salicide-structure semiconductor device

1996-09-12

1999-03-16

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438586, 438595, 438683, 438695, 438720, 438788, H01L 21335

Patent

active

058829750

ABSTRACT:
The method of fabricating a semiconductor device includes the steps of (a) forming a metal film over a semiconductor substrate including a gate electrode on a surface thereof, an insulating sidewall covering a side surface of the gate electrode therewith, and source and drain regions formed therein, (b) forming a metal silicide film both on the gate electrode and the source and drain regions by thermally treating the semiconductor substrate to cause the metal film to react with silicon, and (c) etching out a non-silicided portion of the metal film, and further includes the step of (d) removing a portion of the non-silicided portion remaining non-etched or the metal film, by means of plasma-enhanced chemical vapor deposition. The step (d) may be carried out between the steps (a) and (b), between the steps (b) and (c), or after the step (c). The method is applied to a salicide structure semiconductor device, and makes it possible to completely remove a metal film or a metal silicide film formed on a sidewall by virtue of etching performance of plasma-enhanced CVD to thereby prevent occurrence of short-circuit between a gate electrode and source/drain regions without causing reduction in a thickness of a silicide film and side-etching of a silicide film.

REFERENCES:
patent: 5089442 (1992-02-01), Olmer
patent: 5419805 (1995-05-01), Jolly
patent: 5573961 (1996-11-01), Hsu et al.
patent: 5679606 (1997-10-01), Wang et al.

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