Method of fabricating ROMs by selectively forming sidewalls on w

Details Method of fabricating ROMs by selectively forming sidewalls on w Method of fabricating ROMs by selectively forming sidewalls on w

1996-02-28

1998-05-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438290, H01L 218246

Patent

active

057535531

ABSTRACT:
In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.

REFERENCES:
patent: 5328863 (1994-07-01), Cappelletti et al.
patent: 5407852 (1995-04-01), Ghio et al.
patent: 5429975 (1995-07-01), Sheu et al.
patent: 5449632 (1995-09-01), Hong

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