Method of fabricating recess transistor in integrated...

Details Method of fabricating recess transistor in integrated... Method of fabricating recess transistor in integrated...

2007-05-22

2007-05-22

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S245000, C257SE21548, C257SE21655, C257SE21553

Reexamination Certificate

active

10849671

ABSTRACT:
Provided is a method of fabricating a recess transistor in an integrated circuit device. In the provided method, a device isolation region, which contacts to the sidewall of a gate trench and a substrate region remaining between the sidewall of the device isolation region and the sidewall of the gate trench, is etched to expose the remaining substrate region. Thereafter, the exposed portion of the remaining substrate region is removed to form a substantially flat bottom of the gate trench. The recess transistor manufactured by the provided method has the same channel length regardless of the locations of the recess transistor in an active region.

REFERENCES:
patent: 6255158 (2001-07-01), Furukawa et al.
patent: 6333230 (2001-12-01), Bryant et al.
patent: 6740592 (2004-05-01), Doong
patent: 6825092 (2004-11-01), Zurcher et al.
patent: 6884677 (2005-04-01), Kim

Affiliated with

Also associated with

Rating

Method of fabricating recess transistor in integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating recess transistor in integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating recess transistor in integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3793026