Method of fabricating plasma reactor parts

Details Method of fabricating plasma reactor parts Method of fabricating plasma reactor parts

2011-05-17

2011-05-17

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

C117S005000, C117S008000, C117S009000, C117S931000, C438S786000

Reexamination Certificate

active

07942965

ABSTRACT:
A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and post-machining anneal are designed to provide silicon parts that are particularly suited for use in corrosive environments.

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