Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-24
2008-12-23
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S149000
Reexamination Certificate
active
07468304
ABSTRACT:
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
REFERENCES:
patent: 7061014 (2006-06-01), Hosono et al.
patent: 7189992 (2007-03-01), Wager, III et al.
patent: 2003/0021822 (2003-01-01), Lloyd
patent: 2003/0168004 (2003-09-01), Nakata et al.
patent: 2006/0197092 (2006-09-01), Hoffman et al.
patent: 2007/0010052 (2007-01-01), Huang et al.
patent: 2007/0087492 (2007-04-01), Yamanaka
patent: 2007/0141789 (2007-06-01), Kiesel et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 62-001245 (1987-01-01), None
patent: 62-007166 (1987-01-01), None
patent: 1-287965 (1989-11-01), None
patent: 2-205324 (1990-08-01), None
patent: 2002-76356 (2002-03-01), None
patent: 2004-103957 (2004-04-01), None
patent: WO 2005/088726 (2005-09-01), None
patent: WO 2005/093846 (2005-10-01), None
patent: WO 2005/093847 (2005-10-01), None
patent: WO 2005/093848 (2005-10-01), None
patent: WO 2005/093849 (2005-10-01), None
patent: WO 2005/093850 (2005-10-01), None
patent: WO 2005/093851 (2005-10-01), None
patent: WO 2005/093852 (2005-10-01), None
K. Nomura et al., “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, Nov. 25, 2004, pp. 488-492.
T. Akihiro et al., “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4”, Thin Solid Films, vol. 486, 2005, pp. 38-41.
Kaji Nobuyuki
Yabuta Hisato
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Le Thao P.
LandOfFree
Method of fabricating oxide semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating oxide semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating oxide semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4051554