Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-12
2011-04-12
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S315000, C257S317000, C257S318000, C257S322000, C365S185010, C365S185050, C365S185080, C365S185090, C365S185140, C365S185170, C365S185260, C365S185280, C365S185290, C365S185330, C438S201000, C438S202000, C438S257000, C438S258000, C438S259000, C438S261000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000, C438S267000, C438S271000, C438S290000, C438S291000, C438S292000, C711S103000
Reexamination Certificate
active
07923327
ABSTRACT:
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device comprises: a control gate region formed by doping a semiconductor substrate with second impurities; an electron injection region formed by doping the semiconductor substrate with first impurities, where a top surface of the electron injection region includes a tip portion at an edge; a floating gate electrode covering at least a portion of the control gate region and the tip portion of the electron injection region; a first tunnel oxide layer interposed between the floating gate electrode and the control gate region; a second tunnel oxide layer interposed between the floating gate electrode and the electron injection region; a trench surrounding the electron injection region in the semiconductor substrate; and a device isolation layer pattern filled in the trench.
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Dongbu Hi-Tek Co., Ltd.
Dulka John P
Richards N Drew
Saliwanchik Lloyd & Eisenschenk
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