Method of fabricating non-volatile memory device

Details Method of fabricating non-volatile memory device Method of fabricating non-volatile memory device

2011-03-29

2011-03-29

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C257SE21179

Reexamination Certificate

active

07915120

ABSTRACT:
Provided is a method of fabricating a non-volatile semiconductor device. The method includes: forming a first hard mask layer over a substrate; etching the first hard mask layer and the substrate to form a plurality of isolation trenches extending in parallel to one another in a first direction; burying a dielectric layer in the isolation trenches to form a isolation layer; forming a plurality of floating gate mask patterns extending in parallel to one another in a second direction intersecting with the first direction over a resulting structure where the isolation layer is formed; etching the first hard mask layer by using the floating gate mask patterns as an etch barrier to form a plurality of island-shaped floating gate electrode trenches; and burying a conductive layer in the floating gate electrode trenches to form a plurality of island-shaped floating gate electrodes.

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Korean Notice of Allowance for application No. 10-2008-0087741, citing the above reference(s).

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