Method of fabricating non-volatile memory

Details Method of fabricating non-volatile memory Method of fabricating non-volatile memory

2007-10-23

2007-10-23

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000, C257S316000, C257SE21180, C257SE21210, C257SE21423, C257SE21679

Reexamination Certificate

active

11558453

ABSTRACT:
A method of fabricating a non-volatile memory is described. A plurality of first memory units having gaps between each other is formed over a substrate. Insulating spacers are formed on the sidewalls of the first memory units. A composite layer is formed on the substrate and the gaps between the first memory units are filled with a doped polysilicon layer. Thereafter, a portion of the doped polysilicon layer is removed to form trenches. After that, a metallic layer fills the trenches. A portion of the metallic layer is removed to form a plurality of gates. The gates and the composite layer together form a plurality of second memory units. The second memory units and the first memory units together constitute a memory cell column. Then, a source region and a drain region are formed in the substrate adjacent to the two sides of the memory cell column.

REFERENCES:
patent: 7238974 (2007-07-01), Strassburg et al.

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