Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-03-15
2005-03-15
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S483000, C438S046000
Reexamination Certificate
active
06867112
ABSTRACT:
The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor layer adjacent to the one nitride semiconductor layer among the plural steps, a step of changing a growth ambient pressure from a first growth ambient pressure to a second growth ambient pressure different from the first growth ambient pressure.
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Ban Yuzaburo
Harafuji Kenji
Ishibashi Akihiko
Kidoguchi Isao
McDermott Will & Emery LLP
Mulpuri Savitri
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