Method of fabricating nitride semiconductor device

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer

Reexamination Certificate

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C438S483000, C438S046000

Reexamination Certificate

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06867112

ABSTRACT:
The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor layer adjacent to the one nitride semiconductor layer among the plural steps, a step of changing a growth ambient pressure from a first growth ambient pressure to a second growth ambient pressure different from the first growth ambient pressure.

REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 5637531 (1997-06-01), Porowski et al.
patent: 5787104 (1998-07-01), Kamiyama et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 5926726 (1999-07-01), Bour et al.
patent: 6023077 (2000-02-01), Iyechika et al.
patent: 6030848 (2000-02-01), Yuge et al.
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6060335 (2000-05-01), Rennie et al.
patent: 6430202 (2002-08-01), Van De Walle et al.
patent: 20020022290 (2002-02-01), Kong et al.
patent: 0 887 436 (1998-12-01), None
patent: 2769924 (1999-04-01), None
patent: 06-177423 (1994-06-01), None
patent: 06-196757 (1994-07-01), None
patent: 07-235505 (1995-09-01), None
patent: 08-255932 (1996-10-01), None
patent: 08-316141 (1996-11-01), None
patent: 09-186363 (1997-07-01), None
patent: 09-213998 (1997-08-01), None
patent: 2702889 (1997-10-01), None
patent: 10-182282 (1998-07-01), None
patent: 11-074203 (1999-03-01), None
N. Yoshimoto et al., Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy, Appl. Phys. Lett. 59 (18), pp. 2251-2253, Oct. 28, 1991.
S. Nakamura et al., “InGaN-Based Multi-Quantum-Well-Structure Laser Diodes”, Jpn. J. Appl. Phys. vol. 35, pf. 2, No. 1B, pp. L74-L76, Jan. 15, 1996.
K. Yanashima et al., “Room-Temperature Continuous-Wave Operation of GaN-Based Laser Diodes Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition”, Journal of Electronic Materials, vol. 28, No. 3, pp. 287-289, 1999.
Miyake et al., “Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy”, pp. L1000-L1002, Sep. 15, 1999, Jpn. J. Appl. Phys., vol. 38, Part 2, No. 9A/B.
Nakamura et al., “A1N and A1GaN Growth Using Low-Pressure Metalorganic Chemical Vapor Deposition”, pp. 280-285, 1998, Journal of Crystal Growth 195.
Mihopoulos, et al., “A Reaction-Transport Model for A1GaN MOVPE Growth”, pp. 733-739, 1998, Journal of Crystal Growth 195.
Lee et al., “Characteristics of In Ga N/GaN Grown by LPMOVPE with the Variation of Growth Temperature”, pp. 6-10, 1997, Journal of Crystal Growth 182.

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