Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-03-13
2009-08-11
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S583000, C438S683000, C438S664000, C438S508000
Reexamination Certificate
active
07572722
ABSTRACT:
A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
REFERENCES:
patent: 2004/0061228 (2004-04-01), Wieczorek et al.
patent: 2005/0208762 (2005-09-01), Chen
patent: 2006/0205214 (2006-09-01), Shih
patent: 2007/0018255 (2007-01-01), Kawamura
patent: 1633703 (2005-06-01), None
patent: WO02/47145 (2002-06-01), None
Chang Yu-Lan
Chen Ming-Tsung
Chen Yi-Wei
Chiang Yi-Yiing
Hsieh Chao-Ching
Hsu Winston
Le Dung A.
United Microelectronics Corp.
LandOfFree
Method of fabricating nickel silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating nickel silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating nickel silicide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4056187