Method of fabricating mixed-mode device

Details Method of fabricating mixed-mode device Method of fabricating mixed-mode device

1999-02-01

2000-02-29

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438279, 438981, H01L 21336

Patent

active

060308729

ABSTRACT:
A method for fabricating a mixed-mode device. A first gate oxide layer and a second gate oxide layer are formed. The polysilicon layer is used as a mask to pattern the gate oxide layers. Additionally, a top electrode is formed during the first gate oxide layer is patterned. A bottom electrode is formed during the second gate oxide layer is patterned. The first gate oxide layer and the second gate oxide layer are formed by a single oxidation operation, thus thicknesses of the first gate oxide layer and the second oxide layer can be effectively controlled.

REFERENCES:
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 5028554 (1991-07-01), Kita

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