Method of fabricating metal silicide layer

Details Method of fabricating metal silicide layer Method of fabricating metal silicide layer

2007-06-12

2007-06-12

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S651000, C438S682000, C257SE21006, C257SE21497, C257SE21593

Reexamination Certificate

active

11034400

ABSTRACT:
A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.

REFERENCES:
patent: 4910578 (1990-03-01), Okamoto
patent: 5646070 (1997-07-01), Chung
patent: 5911114 (1999-06-01), Naem
patent: 5981372 (1999-11-01), Goto et al.
patent: 6294464 (2001-09-01), Trivedi
patent: 6605533 (2003-08-01), Trivedi
patent: 2005/0079695 (2005-04-01), Carriere et al.

Affiliated with

Also associated with

Rating

Method of fabricating metal silicide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating metal silicide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating metal silicide layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3871347