Method of fabricating metal-oxide-semiconductor transistor

Details Method of fabricating metal-oxide-semiconductor transistor Method of fabricating metal-oxide-semiconductor transistor

2006-07-13

2009-11-03

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S270000, C438S776000, C438S770000, C257S330000, C257S333000

Reexamination Certificate

active

07611949

ABSTRACT:
A method of fabricating a metal-oxide-semiconductor (MOS) transistor is provided. First, a patterned hard mask layer with an opening therein is formed over the substrate. A spacer is formed on the sidewall of the patterned hard mask layer in the opening. An isotropic etching process is performed on the substrate to form a recess in the substrate. An ion implant process is performed on the substrate in the lower portion of the recess using oxidation-restrained ions. The spacer is removed. Then, a thermal process is performed to form a gate oxide layer on the surface of the substrate within the recess such that the gate oxide layer in the upper portion of the recess is thicker than that in the lower portion of the recess.

REFERENCES:
patent: 6097062 (2000-08-01), Gardner et al.
patent: 6956263 (2005-10-01), Mistry
patent: 2001/0036704 (2001-11-01), Hueting et al.
patent: 2003/0235959 (2003-12-01), Lichtenberger et al.
patent: 2004/0259311 (2004-12-01), Kim

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