Method of fabricating metal-oxide semiconductor transistor

Details Method of fabricating metal-oxide semiconductor transistor Method of fabricating metal-oxide semiconductor transistor

1999-01-11

2000-09-05

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438761, H01L 218234, H01L 21336, H01L 2131

Patent

active

061141968

ABSTRACT:
A method of fabricating a MOS transistor. An undoped multi-layer stacked polysilicon structure is formed on a gate oxide layer and then being doped to increase conductivity. After that, the multi-layer stacked polysilicon structure and the gate oxide layer are patterned to form a gate electrode. A source/drain region is formed by ion implantation with the gate electrode as a mask.

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