Method of fabricating metal-oxide semiconductor (MOS) transistor

Details Method of fabricating metal-oxide semiconductor (MOS) transistor Method of fabricating metal-oxide semiconductor (MOS) transistor

1996-12-12

1999-01-19

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438532, H01L 21265, H01L 2131

Patent

active

058613293

ABSTRACT:
A method of fabricating a metal-oxide semiconductor (MOS) transistor is provided. This method is devised particularly to reduce the level of degradation to the MOS transistor caused by hot carriers. In the fabrication process, a plasma treatment is applied to the wafer to as to cause the forming of a thin layer of silicon nitride on the wafer which covers the gate and the lightly-doped diffusion (LDD) regions on the source/drain regions of the MOS transistor. This thin layer of silicon nitride acts as a barrier which prevents hot carriers from crossing the gate dielectric layer, such that the degradation of the MOS transistor due to hot carriers crossing the gate dielectric layer can be greatly minimized.

REFERENCES:
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 4331710 (1982-05-01), Nozaki et al.
patent: 4960723 (1990-10-01), Davis et al.
patent: 5332697 (1994-07-01), Smith et al.
patent: 5532176 (1996-07-01), Katada et al.
patent: 5567638 (1996-10-01), Lin et al.
patent: 5674788 (1997-10-01), Wristers et al.

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