Method of fabricating metal oxide semiconductor field effect...

Details Method of fabricating metal oxide semiconductor field effect... Method of fabricating metal oxide semiconductor field effect...

2008-09-04

2009-11-24

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S194000, C438S217000, C438S276000, C438S508000

Reexamination Certificate

active

07622356

ABSTRACT:
There are provided a method for fabricating a MOSFET. The method includes: substrate, forming a semiconductor substrate, a germanium layer by implanting germanium (Ge) ions into a semiconductor substrate, forming an epitaxial layer doped with high concentration impurities over the germanium layer, forming a gate structure on the epitaxial layer, and forming source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate. The germanium layer supplies carriers into the epitaxial layer so that short channel effects are reduced.

REFERENCES:
patent: 6313486 (2001-11-01), Kencke et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 7037794 (2006-05-01), Beintner et al.
patent: 2006/0057810 (2006-03-01), Smith et al.

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