Method of fabricating memory

Details Method of fabricating memory Method of fabricating memory

2007-05-07

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21158, C257SE21503, C257SE21597

Reexamination Certificate

active

07344938

ABSTRACT:
A method of fabricating a memory device is described. During the process of forming the memory cell area and the periphery area of a semiconductor device a photoresist layer is formed on the memory cell area before the spacers are formed on the sidewalls of the gates. Therefore, the memory cell area is prevented from being damaged to mitigate the leakage current problem during the process of forming spacers in the periphery circuit area.

REFERENCES:
patent: 6248623 (2001-06-01), Chien et al.
patent: 7166510 (2007-01-01), Lee
patent: 2006/0138463 (2006-06-01), Kim et al.

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