Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-07
2008-03-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21158, C257SE21503, C257SE21597
Reexamination Certificate
active
07344938
ABSTRACT:
A method of fabricating a memory device is described. During the process of forming the memory cell area and the periphery area of a semiconductor device a photoresist layer is formed on the memory cell area before the spacers are formed on the sidewalls of the gates. Therefore, the memory cell area is prevented from being damaged to mitigate the leakage current problem during the process of forming spacers in the periphery circuit area.
REFERENCES:
patent: 6248623 (2001-06-01), Chien et al.
patent: 7166510 (2007-01-01), Lee
patent: 2006/0138463 (2006-06-01), Kim et al.
Chang Kent Kuohua
Kim Jongoh
Wu Yider
Dinh Thu-Huong
J.C. Patents
Lebentritt Michael
MACRONIX International Co. Ltd.
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