Method of fabricating load resistor

Details Method of fabricating load resistor Method of fabricating load resistor

1998-11-06

2000-10-31

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Resistor

438385, 438527, 438530, 438330, H01L 2120

Patent

active

061401986

ABSTRACT:
A method of fabricating a load resistor. The load resistor is often applied in a static random access memory. The interconnect between different conductive regions such as gate and source/drain region is formed by applying a hydrogen treatment to a refractory metal oxide layer, while the load resistors are formed by applying a hydrogen treatment with different parameters as the former one. The insulation is formed by the refractory metal oxide layer which is not to be covered.

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Keu Hong Kim, Eung Ju Oh, Jae Shi Choi; Electrical Conductivity of "Hydrogen-Reduced" Titanium Dioxide (Rutile); 1994.
D.S.Ginley, R.P. Hellmer; Polysilicon Resistor Modification with Hydrogen Plasmas on Fabricated Integrated Circuits; Journal of the Electrochemical Society, Aug. 1987.

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