Method of fabricating lanthanum oxide layer and method of...

Details Method of fabricating lanthanum oxide layer and method of... Method of fabricating lanthanum oxide layer and method of...

2006-12-26

2006-12-26

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21274

Reexamination Certificate

active

07153786

ABSTRACT:
Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.

REFERENCES:
patent: 5916359 (1999-06-01), Baum et al.
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 2004/0043149 (2004-03-01), Gordon et al.
patent: 2006/0141155 (2006-06-01), Gordon et al.
patent: 2002-060944 (2002-02-01), None
patent: 2002-0064126 (2002-08-01), None

Affiliated with

Also associated with

Rating

Method of fabricating lanthanum oxide layer and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating lanthanum oxide layer and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating lanthanum oxide layer and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3714854