Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-18
2009-06-30
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S924000, C257SE21579, C257SE21497
Reexamination Certificate
active
07553758
ABSTRACT:
Method of Fabricating Interconnections of a Microelectronic Device Using a Dual Damascene Process. A method of fabricating interconnections of a microelectronic device includes preparing a semiconductor substrate comprising a lower dielectric layer and a lower interconnection, forming an etch stopper layer and an interlayer dielectric layer on the semiconductor substrate, forming a via hole in the interlayer dielectric layer so that the etch stopper layer is exposed through the via hole, performing carbon doping on the etch stopper layer, performing trench etching to form a trench in the interlayer dielectric layer so that the trench overlaps part of the via hole, removing the carbon-doped etch stopper layer, and filling the via hole and the trench with a conductive material to form an upper interconnection.
REFERENCES:
patent: 6518166 (2003-02-01), Chen et al.
patent: 6649515 (2003-11-01), Moon et al.
patent: 7172959 (2007-02-01), Lee
patent: 2003/0224595 (2003-12-01), Smith et al.
patent: 2004/0140289 (2004-07-01), Su et al.
patent: 2004/0185655 (2004-09-01), Jiang et al.
patent: 2004-221104 (2004-08-01), None
patent: 10-0430472 (2004-04-01), None
Chen Tong Qing
Choi Hyung-yoon
Lin Yi-hsiung
Park Wan-jae
Chartered Semiconductor Manufacturing Ltd.
Everhart Caridad M
International Business Machines - Corporation
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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