Method of fabricating integration of high-voltage devices and lo

Details Method of fabricating integration of high-voltage devices and lo Method of fabricating integration of high-voltage devices and lo

2000-04-25

2000-12-26

Pham, Long

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438276, 438514, 438549, H01L 218234

Patent

active

061658529

ABSTRACT:
The invention describes a method of fabricating the integration of high-voltage devices and low-voltage devices. The ion implantation steps for forming the isolation doping regions and the drafting doping regions in the high-voltage device are used to form simultaneously the anti-punch-through regions in the low-voltage device. The production of the integrated circuit is then finished with other process steps.

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