Method of fabricating insulation layer and method of...

Details Method of fabricating insulation layer and method of... Method of fabricating insulation layer and method of...

2008-12-30

2010-12-07

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257SE21275

Reexamination Certificate

active

07846850

ABSTRACT:
A method for fabricating an insulation layer includes forming an insulation layer over a nitride layer using a silicon source and a phosphorus source, wherein the insulation layer includes a first insulation layer contacting the nitride layer and a second insulation layer formed on the first insulation layer, wherein the first insulation layer is formed using a higher flow rate of the silicon source and a lower flow rate of the phosphorus source than used with the second insulation layer.

REFERENCES:
patent: 6613657 (2003-09-01), Ngo et al.
patent: 6734108 (2004-05-01), Jin et al.
patent: 7074701 (2006-07-01), Cheng et al.

Affiliated with

Also associated with

Rating

Method of fabricating insulation layer and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating insulation layer and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating insulation layer and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4234275