Method of fabricating image sensor

Details Method of fabricating image sensor Method of fabricating image sensor

2011-08-23

2011-08-23

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C257S291000, C257S292000, C257S294000, C257S431000, C257S432000, C257S443000, C257S461000, C257S462000, C257SE31054, C257SE31093

Reexamination Certificate

active

08003429

ABSTRACT:
A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.

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