Method of fabricating high threshold metal oxide silicon read-on

Details Method of fabricating high threshold metal oxide silicon read-on Method of fabricating high threshold metal oxide silicon read-on

1995-06-07

1997-05-20

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L 218246

Patent

active

056311800

ABSTRACT:
A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.

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patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5200802 (1993-04-01), Miller

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