Method of fabricating high-k dielectric layer having reduced...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C257S635000, C257SE29042, C257SE21639, C438S785000

Reexamination Certificate

active

07396777

ABSTRACT:
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.

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patent: 6291283 (2001-09-01), Wilk
patent: 6348386 (2002-02-01), Gilmer
patent: 6407435 (2002-06-01), Ma et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 2005/0106798 (2005-05-01), Lee et al.
patent: 01-28417 (2001-04-01), None
patent: 02-01337 (2002-01-01), None
patent: 10-2005-0062132 (2005-06-01), None

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