Method of fabricating high-k dielectric layer having reduced...

Details Method of fabricating high-k dielectric layer having reduced... Method of fabricating high-k dielectric layer having reduced...

2008-07-08

2008-07-08

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S635000, C257SE29042, C257SE21639, C438S785000

Reexamination Certificate

active

07396777

ABSTRACT:
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.

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patent: 10-2005-0062132 (2005-06-01), None

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