Method of fabricating gates

Details Method of fabricating gates Method of fabricating gates

2007-03-06

2007-03-06

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S585000, C438S275000

Reexamination Certificate

active

11016050

ABSTRACT:
A method of fabricating gates is provided. A first sacrificial layer having a first and a second gate openings therein is formed on a substrate. Next, a gate dielectric layer is formed on the substrate exposed by the first sacrificial layer. Thereafter, a second sacrificial layer is filled in the first and second gate openings. The second sacrificial layer in the first gate opening is removed, and then a first conductive layer is filled in the first gate opening as a gate of a MOS transistor of a first conductivity type. Then, the second sacrificial layer in the second gate opening is removed. A second conductive layer is filled in the second gate opening as a gate of a MOS transistor of a second conductivity type, and the first sacrificial layer is removed.

REFERENCES:
patent: 6410376 (2002-06-01), Ng et al.
patent: 6677652 (2004-01-01), Lin et al.

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