Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2007-12-27

2011-11-15

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21294, C257SE21438, C257SE21624, C257SE21685, C438S682000, C438S692000

Reexamination Certificate

active

08058132

ABSTRACT:
The present disclosure relates to a method of fabricating a flash memory device. According to the present disclosure, a hard mask layer to which surface roughnesses have been transferred by a metal silicide layer, including the surface roughness, is polished before or during a gate etch process in order to diminish the surface roughnesses. Thus, although surface roughnesses exist in the metal silicide layer, a SAC nitride layer formed over a gate can be prevented from being lost in a subsequent polishing process of a pre-metal dielectric layer, which is performed in order to form a contact plug. Accordingly, a hump phenomenon of a transistor can be improved.

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Quirk, Michael and Serda, Julian; “Semiconductor Manufacturing Technology”; 2001; Prentice-Hall, Inc.; Chapter 16; pp. 435-474.

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