Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2006-10-24

2006-10-24

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S508000, C438S424000, C438S508000, C257S315000, C257SE21422, C257SE21680, C257SE29129

Reexamination Certificate

active

07125769

ABSTRACT:
A method of fabricating a flash memory devices disclosed wherein, upon formation of sidewall oxide films, a regrown thickness of a screen oxide film is controlled. The width of an element isolation film is reduced by means of an etch process for removing the re-growth oxide film. This allows a floating gate space to be easily secured, and a thickness of the sidewall oxide films is reduced by means of a liner nitride film pre-treatment cleaning process. It is thus possible to secure the trench space, which facilitates gap-filling.

REFERENCES:
patent: 6613646 (2003-09-01), Sahota et al.

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