Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2008-06-10

2008-06-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S306000

Reexamination Certificate

active

07384844

ABSTRACT:
A method of fabricating a flash memory device includes defining a high voltage region and a low voltage region on a substrate. The high voltage region provides an area for one or more first transistors configured to operation at a first voltage, the low voltage region providing an area for one or more second transistors configured to operation at a second voltage that is lower than the first voltage, each first transistor having a gate and a source/drain region on each side of the gate. A first impurity region is formed as part of the source/drain region, the first impurity region having a first depth from an upper surface of the substrate, the first impurity region being of first conductivity having a first impurity concentration. A second impurity is formed as part of the source/drain region, the second impurity region having a second depth from the upper surface of the substrate that is less than first depth, the second impurity region being of the first conductivity and having a second impurity concentration that is greater than the first impurity concentration. Impurities of second conductivity are implanted into the source/drain region.

REFERENCES:
patent: 5789292 (1998-08-01), Yamazaki et al.
patent: 6025229 (2000-02-01), Hong
patent: 6235589 (2001-05-01), Meguro
patent: 6605506 (2003-08-01), Wu
patent: 6777758 (2004-08-01), Yamashita et al.
patent: 6803277 (2004-10-01), Dong et al.
patent: 2002/0041000 (2002-04-01), Watanabe et al.
patent: 2004/0029372 (2004-02-01), Jang et al.
patent: 10-2001-0061414 (2001-07-01), None
patent: 10-2003-0038041 (2003-05-01), None
patent: 10-2004-0008520 (2004-01-01), None
patent: 10-2004-0062276 (2007-07-01), None

Affiliated with

Also associated with

Rating

Method of fabricating flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2810820