Method of fabricating flash memory cell

Details Method of fabricating flash memory cell Method of fabricating flash memory cell

1998-02-17

1999-11-30

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, H01L 21336

Patent

active

059941855

ABSTRACT:
A method of fabricating a flash memory. A heavily doped region with the opposite polarity of the drain region is formed between the channel region and the drain region. The heavily doped region is in a bar shape extending towards both the drain and the source regions along a side of the floating gate. Furthermore, the reading operation is performed in reverse by applying a zero voltage to the drain region, and a non-zero voltage to the source region.

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patent: 5591652 (1997-01-01), Matsushita
patent: 5804470 (1998-09-01), Wollesen

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