Method of fabricating flash memory

Details Method of fabricating flash memory Method of fabricating flash memory

2004-09-24

2008-10-07

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S260000, C257S321000, C257SE21681, C365S184000

Reexamination Certificate

active

07432157

ABSTRACT:
Flash memory and methods of fabricating flash memory are disclosed. A disclosed method comprises: forming a first floating gate; and extending the first floating gate by forming a second floating gate adjacent a first sidewall of the floating gate. The second floating gate extends upward above the first floating gate. The method also includes depositing a dielectric layer on the first floating gate and the second floating gate; and forming a control gate on the dielectric layer.

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patent: 10-2002-0067787 (2002-08-01), None
patent: 10-2003-0029203 (2003-04-01), None

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