Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-11-04
2000-12-12
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438546, H01L 218247
Patent
active
061598038
ABSTRACT:
A method of fabicrating a flash memory. A semiconductor substrate having a field oxide layer which comprises a plurality of parallel oxide lines, a plurality of parallel word lines perpendicular to the parallel oxide lines, a dielectric layer having a same structure as and under the word lines, a plurality of floating gates separated by the field oxide layer from each other under the dielectric layer, and a plurality of regions encompassed by the field oxide laver and the word lines is provided. A first step of ion implantation to the substrate is performed by using the word lines as masks, so that a plurality of source regions and a plurality of drain regions are formed beside the word lines. Whereas each of the source regions and each of the drain regions are formed in the regions encompassed by the field oxide layer and the word lines. A photo-resist layer is formed to cover the drain regions. A second step of ion implantation to the substrate is performed by using the photo-resist layer and the parallel word lines as masks. The photo-resist layer is removed.
REFERENCES:
patent: 4814286 (1989-03-01), Tam
patent: 5747370 (1998-05-01), Lee
patent: 5776811 (1998-07-01), Wang et al.
patent: 5854108 (1998-12-01), Hsu et al.
Hong Gary
Ko Joe
Chaudhari Chandra
United Microelectronics Corp.
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