Method of fabricating fin field effect transistor using...

Details Method of fabricating fin field effect transistor using... Method of fabricating fin field effect transistor using...

2006-12-26

2006-12-26

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S298000, C438S359000

Reexamination Certificate

active

07153733

ABSTRACT:
Methods of fabricating a fin field effect transistor (FinFET) are disclosed. Embodiments of the invention provide methods of fabricating FinFETs by optimizing a method for forming the fin so that a short channel effect is prevented and high integration is achieved. Accordingly, the fin which has a difficulty in its formation using the current photolithography-etching technique may be readily formed.

REFERENCES:
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patent: 5739057 (1998-04-01), Tiwari et al.
patent: 6174794 (2001-01-01), Gardner et al.
patent: 6222234 (2001-04-01), Imai
patent: 6689650 (2004-02-01), Gambino et al.
patent: 6838322 (2005-01-01), Pham et al.
patent: 7005330 (2006-02-01), Yeo et al.
patent: 2002-151688 (2002-05-01), None
patent: 2001-0048716 (2001-06-01), None
English language abstract of Japanese Publication No. 2002-151688.
English language abstract of Korean Publication No. 2001-0048716.

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