Method of fabricating field effect transistor with an LDD struct

Details Method of fabricating field effect transistor with an LDD struct Method of fabricating field effect transistor with an LDD struct

1997-11-04

1999-11-16

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438592, H01L 218238

Patent

active

059857129

ABSTRACT:
After the formation of a gate electrode, thermal oxidation is performed while an area where a source and drain are to be formed is covered with a gate insulating film, impurity ions are then injected to form low-concentration source and drain regions, an insulating spacer is then formed on the side surface of the gate electrode, and an insulating film is deposited on exposed source and drain regions by chemical vapor deposition. This allows the recovery of the breakdown voltage of the gate insulating film, which is damaged by an MOS transistor whose gate electrode contains a high melting-point metal silicide, and prevents metal oxide from being contained in the insulating film on the source and drain regions.

REFERENCES:
patent: 5089432 (1992-02-01), Yoo
patent: 5094712 (1992-03-01), Becker et al.
patent: 5171700 (1992-12-01), Zamanian
patent: 5259923 (1993-11-01), Hori et al.
patent: 5399514 (1995-03-01), Ichikawa
Wolf et al., "Silicon Processing for the VLSI Era vol. 1: Process Technology", pp. 323-325, Lattice Press, 1986.
Seiki Ogura et al, "Elimination of Hot Electron Gate Current by the Lightly Doped Drain-Source Structure", International Electron Device Meeting (IEDM) Technical Dsigest, 1981, pp. 651-654.

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