Method of fabricating ferroelectric memory device with...

Details Method of fabricating ferroelectric memory device with... Method of fabricating ferroelectric memory device with...

2005-09-20

2005-09-20

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06946340

ABSTRACT:
A method for fabricating a high-density ferroelectric memory device is disclosed in which a plug can be heat-treated at a high temperature. The method includes the following. Forming an interlayer dielectric film on a semiconductor substrate after forming a transistor on the semiconductor substrate. The interlayer dielectric film is selectively etched to form a contact hole. A plug and a barrier film are buried into the contact hole. A conductive film is formed on the interlayer dielectric film including the barrier film. The conductive film is selectively etched to make both ends of the conductive film inclined so as to form a capping layer for capping the barrier film. There are sequentially formed a lower electrode, a ferroelectric thin film and an upper electrode upon the interlayer dielectric film (which includes the capping layer).

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