Method of fabricating embedded dynamic random access memory

Details Method of fabricating embedded dynamic random access memory Method of fabricating embedded dynamic random access memory

1998-04-06

2000-04-11

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438387, 438622, 438672, H01L 218244

Patent

active

060487623

ABSTRACT:
A method of fabricating an embedded dynamic random access memory. Using the method of dual damascence, by forming patterning only one dielectric layer, the contact windows with different depth are formed. In addition, the metal layer formed within the metal connecting regions are used as interconnects without further process.

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IBM Technical Disclosure Bulletin, vol. 34, No. 7A, Dec. 1991.

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