Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-24
1999-09-28
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438281, 438592, H01L 21265
Patent
active
059602880
ABSTRACT:
A method of fabricating an electrostatic protection device, comprises a semiconductor substrate which includes a first type well, a second type well, and a field oxide layer in between. A first gate, a first spacer, and a first source/drain are formed in the first type well. The second type has a second gate, a second spacer, and the second source/drain formed therein. In addition, an oxide layer is distributed on the first gate, the second gate, a part of the first source/drain, and a part of the second source/drain. A silicide layer is formed on the uncovered first source/drain and the uncovered second source/drain. Therefore, the silicide layer and the gate oxide layer are spaced apart.
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Hong Gary
Ko Joe
Booth Richard
United Semiconductor Corp.
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