Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-23
2011-08-23
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21396, C257SE21569
Reexamination Certificate
active
08003461
ABSTRACT:
A method of fabricating an efuse structure, a resistor structure and a transistor structure. First, a work function metal layer, a polysilicon layer and a first hard mask layer are formed to cover a transistor region, a resistor region and an e-fuse region on a substrate. Then, the work function metal layer on the resistor region and the efuse region is removed by using a first photomask. Later, a gate, a resistor, an efuse are formed in the transistor region, the resistor region and the efuse region respectively. After that, a dielectric layer aligning with the top surface of the gate is formed. Later, the polysilicon layer in the gate is removed by taking a second hard mask as a mask to form a recess. Finally, a metal layer fills up the recess.
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Chen Cheng-Guo
Hsu Che-Hua
Hsu Shao-Hua
Lee Zhi-Cheng
Hsu Winston
Lindsay, Jr. Walter L
Margo Scott
United Microelectronics Corp.
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