Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-11-19
2011-12-06
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S132000, C438S281000, C438S381000, C438S384000, C257S408000, C257SE21438, C257SE21444
Reexamination Certificate
active
08071437
ABSTRACT:
A method of fabricating an efuse, a resistor and a transistor includes the following steps: A substrate is provided. Then, a gate, a resistor and an efuse are formed on the substrate, wherein the gate, the resistor and the efuse together include a first dielectric layer, a polysilicon layer and a hard mask. Later, a source/drain doping region is formed in the substrate besides the gate. After that, the hard mask in the resistor and the efuse is removed. Subsequently, a salicide process is performed to form a silicide layer on the source/drain doping region, the resistor, and the efuse. Then, a planarized second dielectric layer is formed on the substrate and the polysilicon in the gate is exposed. Later, the polysilicon in the gate is removed to form a recess. Finally a metal layer is formed to fill up the recess.
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Lin Yung-Chang
Tseng Ching-Hsiang
Wong Chang-Chien
Wu Kuei-Sheng
Hsu Winston
Margo Scott
Thomas Toniae
United Microelectronics Corp.
Wilczewski Mary
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