Method of fabricating dual damascene interconnections of...

Details Method of fabricating dual damascene interconnections of... Method of fabricating dual damascene interconnections of...

2007-02-27

2007-02-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S620000, C438S624000, C438S634000, C438S637000, C438S638000, C438S639000, C438S640000, C257SE21579

Reexamination Certificate

active

10625007

ABSTRACT:
A method of fabricating dual damascene interconnections is provided. A dual damascene region is formed in a hybrid dielectric layer having a dielectric constant of 3.3 or less, and a carbon-free inorganic material is used as a via filler. The present invention improves electrical properties of dual damascene interconnections and minimizes defects.

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