Method of fabricating dual damascene interconnection

Details Method of fabricating dual damascene interconnection Method of fabricating dual damascene interconnection

2007-02-13

2007-02-13

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C257SE21579

Reexamination Certificate

active

11157363

ABSTRACT:
In a method of fabricating a dual damascene interconnection, a reliable trench profile is secured. The method includes forming a lower interconnect feature on a substrate, forming a dielectric layer on the lower interconnect feature, forming a hard mask on the dielectric layer, forming a via in the dielectric layer using the hard mask as an etch mask, forming a trench hard mask defining a trench by patterning the hard mask, forming a trench, which is connected with the via and in which an upper interconnection line is formed, by partially etching the dielectric layer using the trench hard mask as an etch mask, removing the trench hard mask using wet etch, and forming an upper interconnection line by filling the trench and the via with an interconnection material.

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