Method of fabricating DRAM with novel landing pad process

Details Method of fabricating DRAM with novel landing pad process Method of fabricating DRAM with novel landing pad process

1999-04-28

2000-09-19

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438238, H01L 218242

Patent

active

06121082&

ABSTRACT:
A method for fabricating landing pads for DRAM cells is disclosed. The method comprises following steps: At first, a substrate formed with isolation regions, periphery transistor region and a defined DRAM region are patterned so that an oxide layer on the defined DRAM region are removed to expose the source/drain region nitride caps, and nitride spacers. After a polysilicon layer is formed on all resulting surfaces, a photoresist pattern is subsequently formed on the polysilicon layer of the DRAM region so that the photoresist openings over the nitride cap are formed. Next, a conformal polymer layer of about 0.1 .mu.m in thickness is formed on all resulting surfaces so that a smaller polymer opening about 0.1 .mu.m size or beyond is formed in each of the photoresist openings. Finally, using the polymer layer as a mask and the nitride cap as a stopping layer, a polymer etching and a polysilicon etching are performed so that the landing pads are generated.

REFERENCES:
patent: 5681773 (1997-10-01), Tseng
patent: 5766993 (1998-06-01), Tseng

Affiliated with

Also associated with

Rating

Method of fabricating DRAM with novel landing pad process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating DRAM with novel landing pad process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating DRAM with novel landing pad process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072005