Method of fabricating DRAM capacitors

Details Method of fabricating DRAM capacitors Method of fabricating DRAM capacitors

1998-02-23

1999-02-23

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

058743359

ABSTRACT:
A method for fabricating a semiconductor device is provided comprising forming a dual silicon nitride spacer to be an etching step layer during a self-aligned contact etching step. The invention discloses a bottom electrode with a tri-forked structure and a hemispherical grain layer of a capacitor, therefore the capacitor has a larger surface area. So the capacitor made by the invention has a high capacitance even though the planar surface size is reduced continually.

REFERENCES:
patent: 5508223 (1996-04-01), Tseng
patent: 5573968 (1996-11-01), Park

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