Method of fabricating DRAM capacitor

Details Method of fabricating DRAM capacitor Method of fabricating DRAM capacitor

1999-04-05

2000-06-20

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

060777419

ABSTRACT:
A method of fabricating a DRAM capacitor. After forming a node contact opening in a dielectric layer on the substrate, a conductive layer having an annulus hollow is formed. A recess is formed on the conductive layer and a spacer is formed on the sidewall of the spacer, after which the annulus hollow is filled with an oxide layer. A photoresist layer for defining the capacitor region is formed. The etching stop layer, the oxide layer, and the spacer are removed to form the bottom electrode. Then, the dielectric layer and the upper electrode are formed in sequence.

REFERENCES:
patent: 5981337 (1999-11-01), Chuang
patent: 6015734 (1999-11-01), Huang et al.

Affiliated with

Also associated with

Rating

Method of fabricating DRAM capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating DRAM capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating DRAM capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851379