Method of fabricating DRAM capacitor

Details Method of fabricating DRAM capacitor Method of fabricating DRAM capacitor

1997-11-06

1999-11-09

Kunemund, Robert

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438254, 438255, 438256, 438396, 438397, 438398, 438399, H01L 2170, H01L 2100

Patent

active

059813342

ABSTRACT:
A method for fabricating DRAM capacitor which includes forming a transistor having a source/drain regions and a gate electrode above a silicon substrate; then, forming sequentially a stack of layers including a first insulating layer, a second insulating layer, a third insulating layer and a hard mask layer over the transistor; subsequently, patterning and etching the hard mask layer. Thereafter, an oxide layer is formed over the hard mask layer, and then portions of the layers are etched to form a capacitor region over the oxide layer and a contact opening exposing a portion of the source/drain region. In the subsequent step, a conducting layer is formed over the oxide layer, the hard mask layer, the sidewalls of the contact opening and the exposed portion of the source/drain region. Next, a polishing method is used to remove the conducting layer above the oxide layer, and then the oxide layer is removed to form a lower electrode. A dielectric layer is then formed over the lower electrode, and finally an upper electrode layer is formed over the dielectric layer.

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