Method of fabricating dielectric layer

Details Method of fabricating dielectric layer Method of fabricating dielectric layer

1999-08-10

2000-08-15

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438240, 438287, 438775, 438785, H01L 21336, H01L 2131, H01G 406

Patent

active

06103567&

ABSTRACT:
A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.

REFERENCES:
patent: 5907470 (1999-05-01), Kita et al.
patent: 5985730 (1999-11-01), Lim
patent: 6027977 (2000-02-01), Mogami

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