Method of fabricating cylinder capacitors

Details Method of fabricating cylinder capacitors Method of fabricating cylinder capacitors

1998-04-13

1999-12-14

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438254, 438381, 438397, H01L 218242, H01L 2120

Patent

active

060016825

ABSTRACT:
A method of fabricating cylinder capacitors is provided comprising forming a first conductive layer and a dielectric layer on the semiconductor substrate. A via is formed in the dielectric layer. Then, a second conductive layer and a top oxide layer are formed on the dielectric layer. Part of the top oxide layer and the second conductive layer is removed by pattering the photoresist layer. A first spacer is formed at a side wall of the top oxide layer and the second conductive layer. The second conductive layer is etched by using the top oxide layer and the first spacer as a mask. Then, the top oxide layer is removed to form a second spacer. The second spacer is used as a mask in etching the second conductive layer to form a cup-shaped lower electrode. Further, a dielectric film layer and an upper electrode are formed to make a cylinder capacitor.

REFERENCES:
patent: 5438013 (1995-08-01), Kim et al.
patent: 5733808 (1998-03-01), Tseng
patent: 5861331 (1999-01-01), Chien
patent: 5902126 (1999-05-01), Hong et al.
patent: 5930621 (1999-07-01), Kang et al.

Affiliated with

Also associated with

Rating

Method of fabricating cylinder capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating cylinder capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating cylinder capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-862675